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Intel Completes 0.13-Micron Process Technology

Intel Corp. announced that it has completed the development of its 0.13 micron (130 nanometer) generation logic technology, allowing it to manufacture chips with transistors that are approximately 1/1000th the width of a human hair. This advanced process technology will begin volume manufacturing next year.

The company has built functional static RAMs and microprocessors with the technology, which features 70 nanometer (nm) transistor gate width, 1.5 nm gate oxide thickness, copper interconnects, and low-k dielectrics. Intel is the first to complete development of the 130 nm generation process technology. Intel will present details of this process technology at the International Electron Devices Meeting (IEDM) in December 2000.

The 130 nm logic process will operate at 1.3 volts or less, lowering the voltage in technologies by 20 percent. This will reduce power consumption and increase battery life in microprocessors targeted for mobile computing. Additionally, Intel has focused on reducing SRAM cell size in its 130 nm process. – Isaac Slepner

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Scott Bekker is editor in chief of Redmond Channel Partner magazine.